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| FDS6993 June 2003 FDS6993 Dual P-Channel PowerTrench(R) MOSFET General Description These P-Channel MOSFETs are made using FSC's PowerTrench(R) technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it's own heat sink. The combination of silicon and package technologies results in minimum board space and cost. Features * Q1: P-Channel -4.3A, -30V RDS(on) = 55m @ VGS = -10V * Q2: RDS(on) = 85m @ VGS = -4.5V P-Channel -6.8A, -12V RDS(on) = 17m @ VGS = -4.5V RDS(on) = 24m @ VGS = -2.5V * RDS(on) = 30m @ VGS = -1.8V High power and handling capability in a widely used surface mount package D1 D D1 D DD2 D2 D 5 6 7 G2 S2 G Q2 4 3 2 Q1 SO-8 Pin 1 SO-8 G1 S1 S S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25C unless otherwise noted Parameter Q1 -30 (Note 1a) Q2 -12 8 -6.8 -20 2 1.6 1 0.9 -55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation 25 -4.3 -20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDS6993 Device FDS6993 Reel Size 13" Tape width 12mm Quantity 2500 units (c)2003 Fairchild Semiconductor Corporation FDS6993 Rev C (W) FDS6993 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = -250 A VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = -24 V, VGS = 0 V VDS = -10 V, VGS = 0 V VGS = 25 V, VDS = 0 V VGS = 8 V, VDS = 0 V VDS = VGS, ID = -250 A VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = -10 V, ID = -4.3 A VGS = -10 V, ID = -4.3 A, TJ = 125C VGS = -4.5 V, ID = -3.4 A VGS = -4.5 V, ID = -6.8 A VGS = -4.5 V, ID = -6.8 A, TJ = 125C VGS = -2.5 V, ID = -5.9 A VGS = -1.8 V, ID = -5.0 VGS = -10 V, VDS = -5 V VGS = -4.5 V, VDS = -5 V VDS = -10 V, ID = -7 A VDS = -5 V, ID = -5 A Q1 VDS = -15 V, VGS = 0 V, f = 1.0 MHz Type Min Typ Max Units Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 -30 -12 -21 -0.9 -1 -1 100 100 -1 -0.4 -1.8 -0.5 4 3 48 64 74 11 14 14 19 -20 -20 9 34 530 2980 140 1230 70 790 -3 -1.5 V mV/C A nA Off Characteristics On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance V mV/C 55 80 85 17 24 24 30 m Q2 ID(on) gFS On-State Drain Current Forward Transconductance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Q2 Reverse Transfer Capacitance VDS = -6 V, VGS = 0 V, f = 1.0 MHz pF pF pF FDS6993 Rev C (W) FDS6993 Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDD = -15 V, ID = -1 A, VGS = -10V, RGEN = 6 Q2 VDD = -6 V, ID = -1 A, VGS = -4.5V, RGEN = 6 Q1 VDS = -15 V, ID = -4.3 A, VGS = -5 V Q2 VDS = -6 V, ID = -6.8 A, VGS = -5 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 10 19 14 20 14 134 9 121 5.5 32 1.8 4.0 2.2 8.0 19 34 26 35 24 215 18 193 7.7 45 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -1.3 A Voltage VGS = 0 V, IS = -1.3 A (Note 2) (Note 2) -0.8 -0.6 -1.3 -1.3 -1.2 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125/W when mounted on a .02 in2 pad of 2 oz copper c) 135/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS6993 Rev C (W) FDS6993 Typical Characteristics: Q1 20 2 VGS = -10V 16 -ID, DRAIN CURRENT (A) -4.5V V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -5.0V V VGS=-4.0V 1.8 -6.0V V 12 1.6 -4.5V -5.0V -6.0V -4.0V 1.4 8 -3.5V 4 1.2 -7.0V -8.0V -10V -3.0V 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 1 0.8 0 4 8 12 -ID, DRAIN CURRENT (A) 16 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 RDS(ON), ON-RESISTANCE (OHM) 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -4.3A VGS = -10V 1.3 ID = -2.15A 0.15 1.2 1.1 0.1 TA = 125oC 1 0.05 TA = 25oC 0.9 0.8 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0 2.5 5 7.5 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 15 -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V -ID, DRAIN CURRENT (A) 12 TA = -55oC 125 C o VGS =0V 10 9 25 C o 1 TA = 125oC 25oC -55oC 0.1 6 0.01 3 0.001 0 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6993 Rev C (W) FDS6993 Typical Characteristics: Q1 10 -VGS, GATE-SOURCE VOLTAGE (V) 700 ID = -4.3A 600 VDS = -10V 8 f = 1 MHz VGS = 0 V CAPACITANCE (pF) -20V 6 500 Ciss 400 300 Coss 200 100 -15V 4 2 Crss 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 0 5 10 15 20 25 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100s -ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s DC 0.1 VGS = -10V SINGLE PULSE RJA = 135oC/W TA = 25oC 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 135C/W TA = 25C 30 1 20 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 135 C/W P(pk) t1 t2 SINGLE PULSE o 0.1 0.1 0.05 0.02 0.01 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6993 Rev C (W) FDS6993 Typical Characteristics: Q2 20 VGS = -4.5V 16 -3.5V 12 -2.5V -2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 1.8 1.6 VGS = - 2.0V -ID, DRAIN CURRENT (A) -1.5V -2.5V 1.4 1.2 1 0.8 8 -3.0V -3.5V -4.5V -6.0V -10.0V 4 0 0 0.5 1 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 2 0 4 8 12 -ID, DRAIN CURRENT (A) 16 20 Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.045 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 1.3 ID = -6.8A VGS = - 4.5V ID = -3.4A 0.035 1.2 1.1 0.025 TA = 125oC 1 0.015 TA = 25oC 0.9 0.8 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0.005 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 14. On-Resistance Variation with Temperature. 20 Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 10 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 16 VGS = 0V 1 TA = 125oC 12 TA = 125oC 8 -55 C o 0.1 25oC 0.01 -55oC 4 25 C 0 0 0.4 0.8 1.2 1.6 -VGS, GATE TO SOURCE VOLTAGE (V) 2 o 0.001 0.0001 0 0.2 0.4 0.6 0.8 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6993 Rev C (W) FDS6993 Typical Characteristics: Q2 10 4200 ID = -6.8A -VGS, GATE-SOURCE VOLTAGE (V) 8 f = 1 MHz VGS = 0 V 3500 CAPACITANCE (pF) VDS = -4V 6 2800 Ciss -8V 4 2100 Coss 1400 -6V 2 700 Crss 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60 70 0 0 3 6 9 -VDS, DRAIN TO SOURCE VOLTAGE (V) 12 Figure 18. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 19. Capacitance Characteristics. 50 RDS(ON) LIMIT 100s -ID, DRAIN CURRENT (A) 10 100ms 1s 10s 1 DC 1ms 10ms 40 SINGLE PULSE RJA = 135C/W TA = 25C 30 20 0.1 VGS = -4.5V SINGLE PULSE RJA = 135oC/W TA = 25oC 10 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 20. Maximum Safe Operating Area. Figure 21. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA 0.2 RJA = 135 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 22. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6993 Rev C (W) FDS6993 Rev C (W) |
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